Advanced Methods of Semiconductor Research Seminar – Tuesday 3rd of March 2026
We cordially invite you to Advanced Methods of Semiconductor Research Seminar on Tuesday 3rd of March 2026 at 13:15 in room 321, building A-1, where there will be delivered a lecture:
Nanoengineered two-dimensional transition metal dichalcogenides structures for single-photon sources and a quantum photonic platform
by Paweł Wyborski
from Department of Electrical and Photonics Engineering, Technical University of Denmark
and Department of Experimental Physics, Wrocław Tech
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Lecture abstract:
Efficient single-photon emitters are a key element for future photonic quantum technologies. In particular, the realization of emitters at telecom wavelengths is important for achieving long-distance, large-scale, and secure quantum communication and distributed quantum computing over existing fiber-optic networks [1]. From the perspective of sample preparation, a promising platform is two-dimensional transition metal dichalcogenides (TMDs), as they allow easy preparation via scotch tape exfoliation and exhibit promising properties for the realization of quantum emitters and detectors, including relatively simple optical property manipulation and straightforward integration with other photonics structures [2]. Specifically, TMD mono-, bi-, and few-layers can yield single photons through strain- and defect-engineering, ranging in visible and telecom wavelengths [2]. Moreover, patterned superconducting NbSe2 few-layers devices can be applied for single-photon detection [3].
This presentation will cover research on the development of single-photon sources based on transition-metal dichalcogenide (TMD) quantum-emitter platforms. Recent results concerning WSe2 [4,5] and MoTe2 [6] platforms will be discussed, demonstrating methods for obtaining emitters in the 730–810 nm and above 1100 nm spectral ranges. For WSe2 quantum emitters, the focus will be on results demonstrating charge-noise mitigation through hBN-based encapsulation and electrical biasing. Integration of these emitters with TMD-based photonic structures—specifically, WS2-based waveguides and grating outcouplers—will demonstrate the potential to couple single-photon emission to an on-chip platform [7]. Furthermore, the MoTe2 platform will be discussed for the fabrication of quantum emitters with potential applications in the telecom range. The integration of this host material with DBR-based photonic structures, nanopillar strain-inducing structures, and metallic electrodes will demonstrate single-photon sources with electrical tuning of the emission line [6]. Finally, two-photon interference measurements will reveal a Hong-Ou-Mandel visibility of 10%, representing the first demonstration of indistinguishability characterization in the near-infrared regime for a TMD-based quantum emitter platform.
References:
[1] D.A. Vajner, et al., Adv. Quantum Technol. 5, 2100116 (2022).
[2] A.R.-P. Montblanch, et al., Nat. Nanotechnol. 18, 555 (2023).
[3] P. Metuh, et al., ACS Photonics 12, 11 (2025).
[4] A. Paralikis, et al., npj 2D Mater. Appl. 8, 59 (2024).
[5] A. Paralikis, et al., PRX Quantum 6, 040339 (2025).
[6] P. Wyborski, et al., arXiv preprint arXiv:2508.20743 (2025).
[7] P. Metuh, et al., arXiv preprint arXiv:2512.15337 (2025).
