Modeling of Semiconductor Devices

Head

Marta Gładysiewicz-Kudrawiec
Marta Gładysiewicz

office: 203D, A-1
phone: +48 71 320 42 80


PhD Students

Michał Wiśniewski
Michał Wiśniewski

office: 203L, A-1
phone: +48 71 320 47 22


research

My research focuses on the theoretical investigation of the electronic and optical properties of semiconductor heterostructures. I develop and apply advanced multiband k⋅p models to study band structure, carrier dynamics, and light–matter interaction in low-dimensional systems. Particular attention is given to the modeling of quantum wells, superlattices, and tunnel junctions, including the effects of strain, quantum confinement, and built-in polarization fields. These studies are essential for understanding and optimizing the performance of optoelectronic devices such as light-emitting diodes and laser diodes.

A major part of my scientific activity involves the analysis of material gain in various classes of semiconductors, including both conventional compounds and emerging materials such as perovskites. Over the years, I have developed dedicated numerical tools and simulation codes that facilitate accurate and efficient calculations of electronic structure and optical properties.


 

2025

Oscillations in absorption from InGaN/GaN quantum well to continuum
Marta Gładysiewicz-Kudrawiec, Mirosław Żak, Witold Trzeciakowski
Nanomaterials. 2025, vol. 15, nr 3, art. 174, s. 1-11

2024

Eight-band k·p description and material gain for selected cubic and pseudocubic perovskites
Krzysztof Gawarecki, Michał Wiśniewski, Maciej P. Polak, Robert Kudrawiec, Marta Gładysiewicz
Physical Review Applied. 2024, vol. 22, nr 1, art. 014058, s. 1-14

Molecular guidelines for promising antimicrobial agents
Mateusz Rzycki, Marta Gładysiewicz-Kudrawiec, Sebastian P. Kraszewski
Scientific Reports. 2024, vol. 14, art. 4641, s. 1-14

2023

On the possible method of improving properties of semiconductor lasers
Marta Gładysiewicz, Marek Wartak
Sensors & Transducers. 2023, vol. 263, nr 4, s. 89-97

Theoretical and experimental studies on material gain for wide polar InGaN quantum well-mechanism leading to electric field screening and lasing
Marta Gładysiewicz, Robert Kudrawiec, Grzegorz Muzioł, Henryk Turski, Czesław Skierbiszewski
Advanced Physics Research. 2023, vol. 2, nr 10, art. 2200107, s. 1-8

Analyzing k · p modeling in highly mismatched alloys and other III-V semiconductors
Marta Gładysiewicz, Marek Wartak
Journal of Applied Physics. 2023, vol. 134, nr 23, art. 231101, s. 1-18

2022

Invariant expansion of the 30-band k⋅p model and its parameters for III-V compounds
Krzysztof Gawarecki, Paweł Scharoch, Michał Wiśniewski, Jakub M. Ziembicki, Herbert S. Mączko, Marta Gładysiewicz, Robert Kudrawiec
Physical Review. B. 2022, vol. 105, nr 4, art. 045202, s. 1-16

Effect of substrate orientation on band structure of bulk III-V semiconductors
Marta Gładysiewicz, Marek Wartak
AIP Advances. 2022, vol. 12, nr 11, art. 115208, s. 1-12

Material gain in polar GaInN and AlGaN quantum wells: how to overcome the ”dead” width for light emitters in these QW systems?
Marta Gładysiewicz, Czesław Skierbiszewski, Robert Kudrawiec
IEEE Journal of Selected Topics in Quantum Electronics. 2022, vol. 28, nr 1, art. 1501509, s. 1-9

2021

Diptool – a novel numerical tool for membrane interactions analysis, applying to antimicrobial detergents and drug delivery aids
Mateusz Rzycki, Sebastian P. Kraszewski, Marta Gładysiewicz-Kudrawiec
Materials. 2021, vol. 14, nr 21, art. 6455, s. 1-14

Electronic band structure of semiconductor alloys: from ab initio to k⋅p via computational alchemy, on example of Ge1-xSnx alloy
Paweł Scharoch, Norbert Janik, Michał Wiśniewski, Herbert S. Mączko, Marta Gładysiewicz, Maciej P. Polak, Robert Kudrawiec
Computational Materials Science. 2021, vol. 187, art. 110052, s. 1-8