Modeling of Semiconductor Devices
Head

Marta Gładysiewicz
office: 203D, A-1
phone: +48 71 320 42 80
PhD Students

Michał Wiśniewski
office: 203L, A-1
phone: +48 71 320 47 22
research
My research focuses on the theoretical investigation of the electronic and optical properties of semiconductor heterostructures. I develop and apply advanced multiband k⋅p models to study band structure, carrier dynamics, and light–matter interaction in low-dimensional systems. Particular attention is given to the modeling of quantum wells, superlattices, and tunnel junctions, including the effects of strain, quantum confinement, and built-in polarization fields. These studies are essential for understanding and optimizing the performance of optoelectronic devices such as light-emitting diodes and laser diodes.
A major part of my scientific activity involves the analysis of material gain in various classes of semiconductors, including both conventional compounds and emerging materials such as perovskites. Over the years, I have developed dedicated numerical tools and simulation codes that facilitate accurate and efficient calculations of electronic structure and optical properties.

