Advanced Methods of Semiconductor Research Seminar – Tuesday 13th of January 2026
We cordially invite you to Advanced Methods of Semiconductor Research Seminar on Tuesday 13th of January 2026 at 13:15 in room 321, building A-1, where there will be delivered a lecture:
Electronic and structural study of semiconductors using advanced synchrotron method – general issue and application to materials science
by Dr. Edyta Piskorska-Hommel
from Institute of Low Temperature and Structure Research PAS and Łukasiewicz Research Network – PORT
Polish Center for Technology Development
The lecture abstract is attached below.
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The electronic and structural properties of semiconductors are significant to their performance in modern technologies, including optoelectronics, power electronics, and spintronic devices. In compound semiconductors, particularly III–V nitride alloys, these properties are strongly influenced not only by the average crystal structure but also by local atomic environments, chemical disorder, and defect-related lattice distortions. Understanding such local-scale effects remains a general challenge in materials science, as conventional diffraction techniques provide only averaged structural information and are often insensitive to subtle local deviations.
Summarize, this study demonstrates that advanced synchrotron methods are broadly applicable across diverse classes of functional materials, enabling a unified approach to understanding how local atomic structure governs electronic properties. Such insights are essential for the rational design and optimization of semiconductors, complex alloys, and nanomaterials for next-generation applications in electronics, catalysis, and energy-related technologies.
