Seminarium Advanced Methods of Semiconductor Research – wtorek 9 grudnia 2025
We cordially invite you to Advanced Methods of Semiconductor Research Seminar on Tuesday 9th of December 2025 at 13:15 in room 321, building A-1, where there will be delivered a lecture:
Monolithic Growth of III-V Semiconductor Quantum Dots in Silicon Matrix for Integrated Photonics
by Samar Hagag
from Institute of Nanostructure Technologies and Analytics, University of Kassel
The lecture abstract is attached below.
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Exponential increase in global data traffic over the last decades has driven a strong demand for integrated Silicon photonics, where passive photonics and active optoelectronics are combined on a common Silicon platform for low-cost and high-speed optical communication. A key challenge is the integration of efficient light sources, typically III-V semiconductors, with Silicon [1,2]. Here, a new monolithic integration method using III-V quantum dots embedded in Silicon is presented. In this method, the III-V quantum dots based on InAs/GaAs core/shell geometry are used to confine charge carriers in the III-V material reducing the overlap with defects at the interface between III-V and Silicon and allow direct access to the single crystal Silicon surface enabling coherent Silicon overgrowth (illustrated in the figure below) [3,4]. Using double-chamber Molecular Beam Epitaxy, GaAs islands are first grown on (001) Silicon substrates. GaAs islands size, shape, spacing and surface morphology were found to be dependent on growth parameters. InAs is then deposited on the GaAs islands, followed by GaAs overgrowth to form core/shell structures. Isolated core/shell structures as well as coalesced ones are formed on Silicon with open Silicon surface for subsequent Silicon overgrowth. Initial results including optically active InAs/GaAs core/shell quantum dots directly grown on Silicon and monolithic integration of InAs nanoclusters fully embedded into a defect free and planar Silicon matrix will be discussed. This approach may enable direct integration of III-V quantum dots into Silicon, offering compatibility with standard Silicon processing and a promising path for scalable Silicon photonics.
[1] T. Komljenovic, et al., J. Lightwave Technol. 34, 20–35 (2016)
[2] A.Y. Liu, et al., Appl. Phys. Lett. 104, 041104 (2014)
[3] M. Benyoucef, et al., phys. stat. sol. a. 211(4), 817-822 (2014)
[4] M. Wu, et al., Acta Materialia. 90, 133–139 (2015)