Seminarium Advanced Methods of Semiconductor Research – wtorek 23 czerwca 2026 roku
We cordially invite you to Advanced Methods of Semiconductor Research Seminar on Tuesday 23rd of June 2026 at 13:15 in room 321, building A-1, where there will be delivered a lecture:
Plasma-assisted molecular beam epitaxy of III-nitrides and its application to optoelectronic devices
by Prof. Grzegorz Muzioł
from Institute of High Pressure Physics Polish Academy of Sciences in Warsaw
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Lecture abstract:
III-nitride semiconductors have become a cornerstone of modern optoelectronics, enabling high-performance light-emitting diodes, laser diodes, ultraviolet photodetectors, and micro-light-emitting devices. The exceptional material properties of GaN, AlN, InN, and their alloys, including wide and tunable bandgap, high thermal stability, and excellent reliability, make them attractive for a broad range of applications. Achieving high crystalline quality and precise control of composition and doping remains crucial for further advancement of III-nitride-based technologies.
This work focuses on the growth of III-nitride materials by plasma-assisted molecular beam epitaxy (PAMBE), a versatile epitaxial technique that offers atomic-level control of growth parameters under ultra-high-vacuum conditions. The influence of growth conditions on surface morphology, structural quality, and optical properties of nitride heterostructures is investigated. Particular attention is given to the optimization of growth regimes, interface engineering, and the realization of high-quality active regions suitable for optoelectronic applications.
The grown structures are characterized using a combination of structural, morphological, and optical techniques, providing insight into the relationship between epitaxial growth conditions and material properties. The applicability of PA-MBE-grown III-nitride heterostructures for optoelectronic devices is demonstrated through selected examples developed in our group, including bidirectional GaN-based light-emitting diodes for alternating-current operation [1], ultra-small blue III-nitride microLEDs [2], and laser diode structures employing wide InGaN quantum wells [3]. These results highlight the versatility of PA-MBE for the realization of advanced device architectures and next-generation light sources.
The presented results contribute to a deeper understanding of III-nitride epitaxy and support the development of advanced optoelectronic devices with improved performance and reliability.
[1] M. Żak, G. Muziol, M. Siekacz, A. Bercha, M. Hajdel, K. Nowakowski-Szkudlarek, A. Lachowski, M. Chlipała, P. Wolny, H. Turski, and C. Skierbiszewski, Nature Communications 14 (2023) 7562.
[2] J. Sławińska, G. Muziol, A. Kafar, C. Skierbiszewski, ACS Applied Materials & Interfaces 17 (2025) 6473.
[3] M. Hajdel, K. Gołyga, M. Siekacz, A. Feduniewicz, C. Skierbiszewski, U. T. Schwarz, and G. Muziol, ACS Photonics 12 (2025) 1515.