Advances in Nanoengineering seminar – 6 października 2026

We cordially invite you to Advances in Nanoengineering seminar, which will be held on October 6, 2026 in room 321, building A-1, where

Dr Anna Kafar
from Institute of High Pressure Physics, Polish Academy of Sciences in Warsaw
will deliver a lecture titled:

InAlGaN laser diodes and waveguides for integrated photonics and quantum applications

The lecture abstract is attached below.

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The growing field of quantum technologies is creating an increasing demand for light sources operating in the visible wavelength range, particularly in the violet, blue, and green spectral regions. III-nitride semiconductors are a well-suited platform to meet this need, owing to their compositionally tunable bandgap covering the entire spectral range of interest. However, the  requirements of quantum applications include not only the appropriate emission wavelength but also a narrow spectral linewidth combined with relatively high optical power (~100 – 200 mW). Such characteristics are challenging to achieve with a single emitter (laser diode) and are driving the development of photonic integrated systems combining nitride laser diodes with other photonic components. This presentation summarizes the activities in this area carried out at Institute of High Pressure Physics PAS, Optoelectronic Devices Laboratory.
We first demonstrate our approach to improving temperature stability of the laser diodes through the use of polarization doping. The mechanism exploits the spontaneous and piezoelectric polarization present in wurtzite structures and enables blue lasing even at cryogenic ambient temperatures. Next, we focus on achieving narrow emission linewidths. The presented demonstrations involve distributed-feedback (DFB) lasers as well as coupling to SiN ring resonator. We then demonstrate the possibility of increasing the optical power using a semiconductor optical amplifier, boosting the output power from 5 mW to 150 mW. Finally, we present a novel approach to the fabrication of integrated nitride semiconductor waveguides, opening a path toward light processing within the same chip as the laser diode. The solution is based on introducing a lateral variation of the In content of the InGaN quantum wells, enabling fabrication of low-loss waveguides, despite using the laser epitaxial structure.