Seminarium Advanced Methods of Semiconductor Research – 18 listopada 2025
We cordially invite you to Advanced Methods of Semiconductor Research Seminar on Tuesday 18th of November 2025 at 13:15 in room 321, building A-1, where there will be delivered a lecture:
Nanostructuration of GaN Surfaces: Towards Single-Photon Emission for Quantum Technologies
by Antouman Sallah
from Department of Physics and Astronomy, University of Catania, Italy
The lecture abstract is attached below.
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Photo-electroless etching (PEE), a precise and cost-effective technique, was used to successfully nanostructure the surface of GaN, creating complex nano- and microporous structures and nanowires. The structural composition and morphology of these nanostructures were characterized using energy dispersive X-ray spectroscopy, scanning electron microscopy, and atomic force microscopy. Their optical properties, assessed by room-temperature cathodoluminescence and photoluminescence spectroscopy, revealed a clear correlation between emission characteristics and morphology. Furthermore, the nanostructures can function as a refractive-index-grading layer at the GaN-air interface, increasing the critical angle for light extraction. This effect overcomes inherent extraction limitations, leading to a significant enhancement in photon collection efficiency for GaN-based single-photon sources.